Correlating the Nanostructure and Electronic Properties of InAs Nanowires
نویسندگان
چکیده
منابع مشابه
Correlating the nanostructure and electronic properties of InAs nanowires.
The electronic properties and nanostructure of InAs nanowires are correlated by creating multiple field effect transistors (FETs) on nanowires grown to have low and high defect density segments. 4.2 K carrier mobilities are approximately 4x larger in the nominally defect free segments of the wire. We also find that dark field optical intensity is correlated with the mobility, suggesting a simpl...
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ژورنال
عنوان ژورنال: Nano Letters
سال: 2010
ISSN: 1530-6984,1530-6992
DOI: 10.1021/nl904053j